| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGH27060F |
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| CGH27030F-AMP CGH27030F-TB |
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
| HMC409LP4 |
3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
HITTITE MICROWAVE CORP
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| MAAM-007866-0P1RA1 MAAM-007866-0P1R00 MAAM-007866- |
Broadband Driver Amplifier 50 to 3300 MHz
|
Tyco Electronics
|
| D1023UK D1023 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时，单端）（镀金多用的DMOS射频硅场效应管（60 28V的，500MHz的单端式））
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Microsemi, Corp.
|
| DU28120V DU2812OV |
RF MOSFET Power Transistor/ 12OW/ 28V 2 - 175 MHz
RF MOSFET POWER TRANSISTOR 120W 28V 2-175 MHZ
|
List of Unclassifed Manufacturers
Tyco Electronics
ETC
|
| SM3338-43 |
3300-3800 MHz 20 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| HMC822LP6CE |
FRACTIONAL-N SYNTHESIZER w/ INTEGRATED VCO 665 - 825, 1330 - 1650, 2660 - 3300 MHz
|
Hittite Microwave Corporation
|
| SC4524C |
28V 2A Step-Down Switching Regulator Wide input range: 3V to 28V
|
Semtech Corporation
|
| DU2810 DU2810S |
RF MOSFET Power Transistor, lOW, 28V 2 - 175 MHz
RF MOSFET Power Transistor/ lOW/ 28V 2 - 175 MHz
|
Tyco Electronics
|
